Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film

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dc.contributor.authorYildirim, Murat
dc.contributor.authorOzel, Faruk
dc.contributor.authorSarilmaz, Adem
dc.contributor.authorAljabour, Abdalaziz
dc.contributor.authorPatir, Imren Hatay
dc.date.accessioned2020-03-26T19:41:57Z
dc.date.available2020-03-26T19:41:57Z
dc.date.issued2017
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractTernary I-Cu2WS4 were synthesized based on hot-injection process and their thin films are prepared by spin coating techniques at ambient temperature. The energy dispersive analysis of X-rays of the thin films confirmed that synthesized thin film is stoichiometric. Transmittance and reflectance have been used to determine the optical, dispersion and dielectric properties of the Cu2WS4 in the range of 200-2400 nm. The transparency of the Cu2WS4 is 40-45% in the visible range. Optical dispersion parameters have been calculated by using the single term Sellmeier dispersion relation and Wemple-DiDomenico single oscillator model. Several dispersion parameters were determined by the analysis of refractive index dispersion.Absorption coefficient (alpha), extinction coefficient (), the Urbach energy (), real and imaginary parts of dielectric constant (epsilon) and surface and volume energy loss function have been calculated. The optical bandgap determined by the optical absorbance spectrum analysis showed that thin films possess a direct bandgap of 1.74 eV.en_US
dc.description.sponsorshipKaramanoglu Mehmetbey UniversityKaramanoglu Mehmetbey University; Scientific Research Foundation [32-M-16]; TUBITAK (Scientific and Technological Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [215M309]en_US
dc.description.sponsorshipWe want to thank to Karamanoglu Mehmetbey University, Scientific Research Foundation for (32-M-16) financial support of this work. The authors would like to thank TUBITAK (The Scientific and Technological Research Council of Turkey) (215M309) for supporting this work.en_US
dc.identifier.doi10.1007/s10854-017-6365-0en_US
dc.identifier.endpage6721en_US
dc.identifier.issn0957-4522en_US
dc.identifier.issn1573-482Xen_US
dc.identifier.issue9en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage6712en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-017-6365-0
dc.identifier.urihttps://hdl.handle.net/20.500.12395/35230
dc.identifier.volume28en_US
dc.identifier.wosWOS:000399709300045en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.titleInvestigation of structural, optical and dielectrical properties of Cu2WS4 thin filmen_US
dc.typeArticleen_US

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