Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

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dc.contributor.authorPakma, Osman
dc.contributor.authorCavdar, Sukru
dc.contributor.authorKoralay, Haluk
dc.contributor.authorTugluoglu, Nihat
dc.contributor.authorYuksel, Omer Faruk
dc.date.accessioned2020-03-26T19:41:52Z
dc.date.available2020-03-26T19:41:52Z
dc.date.issued2017
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current-voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (FB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The FB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm(2), respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm(2), respectively. Additionally, the series resistance (R-s) values from modified Norde method and interface state density (N-ss) values using current-voltage measurements have been determined. The values of R-s have been found to be 1924 and 5094 Omega at dark and 100 mW/cm(2), respectively. The values of N-ss have been found to be 4.76 x 10(12) and 3.15 x 10(12) eV(-1) cm(-2) at dark and 100 mW/cm(2), respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.en_US
dc.description.sponsorshipBAP office of Giresun University [FEN-BAP-A-200515-65]en_US
dc.description.sponsorshipThis work is supported by the BAP office of Giresun University with the project number FEN-BAP-A-200515-65.en_US
dc.identifier.doi10.1016/j.physb.2017.09.101en_US
dc.identifier.endpage6en_US
dc.identifier.issn0921-4526en_US
dc.identifier.issn1873-2135en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2017.09.101
dc.identifier.urihttps://hdl.handle.net/20.500.12395/35191
dc.identifier.volume527en_US
dc.identifier.wosWOS:000415632300001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofPHYSICA B-CONDENSED MATTERen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectOrganic semiconductoren_US
dc.subjectCoroneneen_US
dc.subjectSchottky diodeen_US
dc.subjectIllumination intensityen_US
dc.subjectIdeality factoren_US
dc.subjectBarrier heighten_US
dc.titleImprovement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensityen_US
dc.typeArticleen_US

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