Temperature dependence of current-voltage characteristics of Al/rubrene/n-GaAs (100) Schottky barrier diodes

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dc.contributor.authorYuksel, O. F.
dc.contributor.authorTugluoglu, N.
dc.contributor.authorCaliskan, F.
dc.contributor.authorYildirim, M.
dc.date.accessioned2020-03-26T19:26:45Z
dc.date.available2020-03-26T19:26:45Z
dc.date.issued2016
dc.departmentSelçuk Üniversitesien_US
dc.descriptionInternational Semiconductor Science and Technology Conference (ISSTC) -- MAY 11-13, 2015 -- Kusadasi, TURKEYen_US
dc.description.abstract5,6,11,12-tetraphenylnaphthacene (rubrene) is fabricated by spin coating technique on n type GaAs (100) substrate. The current-voltage (I-V) characteristics of Al/rubrene/n-GaAs (100) Schottky diode have been measured in the temperature range of 100-300 K. The experimental values of saturation current (I-0), ideality factor (n) and barrier height (Phi(B)) are calculated as 2.749 pA, 6.051 and 0.297 eV at 100 K and 57.54 pA, 1.918 and 0.870 eV at 300 K, respectively. The values of series resistance (R-S) are calculated using Cheung functions at all temperatures. The R-S values are found as 1276.4 Omega and 119.7 Omega for 100 K and 300 K, respectively. It is found that barrier heights increased while ideality factors and series resistances decrease with the increasing temperature. (C) 2015 Elsevier Ltd. All rights reserved. Selection and Peer-review under responsibility of Conference Committee Members of International Semiconductor Science and Technology Conference 2015 (ISSTC 2015).en_US
dc.description.sponsorshipKavasoglu Pazarlama Ticaret Ltd Sti, Kontek Muhendislik Otomasyon Danismanlik San Tic Ltd Sti, Tekno Tip Analitik Sistemler Ltd Sti, Yildirim Elektronik, Gediz Univ Teknoloji Transfer Ofisi, Hamleen_US
dc.identifier.doi10.1016/j.matpr.2016.03.070en_US
dc.identifier.endpage1276en_US
dc.identifier.issn2214-7853en_US
dc.identifier.issue5en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1271en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.matpr.2016.03.070
dc.identifier.urihttps://hdl.handle.net/20.500.12395/34052
dc.identifier.volume3en_US
dc.identifier.wosWOS:000373069200007en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofMATERIALS TODAY-PROCEEDINGSen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectSchottky diodeen_US
dc.subjectrubrene thin filmen_US
dc.subjectspin coatingen_US
dc.subjectseries resistanceen_US
dc.titleTemperature dependence of current-voltage characteristics of Al/rubrene/n-GaAs (100) Schottky barrier diodesen_US
dc.typeConference Objecten_US

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