The C-V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

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dc.contributor.authorKoçyiğit, Adem.
dc.contributor.authorKüçükçelebi, Hayreddin.
dc.contributor.authorSarılmaz, Adem.
dc.contributor.authorOzel, Faruk.
dc.contributor.authorYıldırım, Murat.
dc.date.accessioned2020-03-26T20:19:22Z
dc.date.available2020-03-26T20:19:22Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractCu2WSe4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed on the Cu2WSe4/p-Si heterojunction device depending on wide range temperatures from 80 to 400K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (R-s) and interface states density (N-ss) were extracted from C-V and G-V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu2WSe4/p-Si device can be employed for controllable capacitor applications.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [17401159]; Karamanoglu Mehmetbey UniversityKaramanoglu Mehmetbey University [32-M-16]en_US
dc.description.sponsorshipThe authors would like to thank to Selcuk University BAP office (Project Number 17401159) and Karamanoglu Mehmetbey University (Grand Number: 32-M-16) for Scientific Research Foundation.en_US
dc.identifier.citationKoçyiğit, A., Küçükçelebi, H., Sarılmaz, A., Ozel, F., Yıldırım, M. (2019). The C–V Characteristics of the Cu2WSe4/p-Si Heterojunction Depending on Wide Range Temperature. Journal of Materials Science: Materials in Electronics, 30(13), 11994-12000.
dc.identifier.doi10.1007/s10854-019-01553-0en_US
dc.identifier.endpage12000en_US
dc.identifier.issn0957-4522en_US
dc.identifier.issn1573-482Xen_US
dc.identifier.issue13en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage11994en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-019-01553-0
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38239
dc.identifier.volume30en_US
dc.identifier.wosWOS:000475587800016en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorKüçükçelebi, Hayreddin.
dc.institutionauthorYıldırım, Murat.
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectCu2WSe4/p-Si
dc.subjectC-V characteristics
dc.subjectwide range temperature
dc.titleThe C-V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperatureen_US
dc.typeArticleen_US

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