The effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctions

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dc.contributor.authorYıldırım, M.
dc.contributor.authorErdal, M. O.
dc.contributor.authorKocyigit, A.
dc.date.accessioned2020-03-26T20:19:25Z
dc.date.available2020-03-26T20:19:25Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Biyoteknoloji Bölümüen_US
dc.description.abstractUndoped and 0.1% 0.5% and 1.0% indium doped ZnO thin films were obtained by spin coating method as interfacial thin film layer between Al metal and p-Si semiconductor to investigate dielectric properties of the Al/In: ZnO/p-Si heterojunctions. Impedance spectroscopy technique was employed to characterize the dielectric properties of the Al/In: ZnO/p-Si heterojunctions depending on frequency (from 10 kHz to 1 MHz) and voltage (from - 5 V to + 5 V). The results imparted that interface states (N-ss), series resistance (R-s), barrier height (Phi(b)) and the concentration of acceptor atoms (N-a) influenced frequency changes. The dielectric parameters such as dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), real and imaginary parts of the electric modulus (M' and M '') and ac electrical conductivity (sigma) values were calculated from impedance spectroscopy measurements and discussed in details for changing frequency and voltage for various In doped ZnO thin film interlayers. The dielectric properties of the Al/In:ZnO/p-Si heterojunctions were affected both In doping concentration and the frequency and voltage changes. The Al/In:ZnO/p-Si heterojunctions can be considered for industrial applications to increase the control.en_US
dc.identifier.citationYıldırım, M., Erdal, M. O., Kocyigit, A. (2019). The Effect of Indium Doping Concentration on the Electrical and Dielectric Properties of Al/In: Zno/P-Si Heterojunctions. Physica B: Condensed Matter, 572, 153-160.
dc.identifier.doi10.1016/j.physb.2019.07.055en_US
dc.identifier.endpage160en_US
dc.identifier.issn0921-4526en_US
dc.identifier.issn1873-2135en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage153en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2019.07.055
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38257
dc.identifier.volume572en_US
dc.identifier.wosWOS:000485002600023en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYıldırım, M.
dc.language.isoenen_US
dc.publisherELSEVIERen_US
dc.relation.ispartofPHYSICA B-CONDENSED MATTERen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectIn doped ZnO thin filmen_US
dc.subjectInterface statesen_US
dc.subjectImpedance spectroscopyen_US
dc.subjectFrequency dependingen_US
dc.subjectDielectric propertiesen_US
dc.subjectAl/In:ZnO/p-Si heterojunctionen_US
dc.titleThe effect of indium doping concentration on the electrical and dielectric properties of Al/In:ZnO/p-Si heterojunctionsen_US
dc.typeArticleen_US

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