Temperature-dependent barrier characteristics of Ag/p-SnSe Schottky diodes based on I-V-T measurements

Basit Öğe Kaydı
dc.contributor.authorTugluoglu, N
dc.contributor.authorKaradeniz, S
dc.contributor.authorSahin, M
dc.contributor.authorSafak, H
dc.date.accessioned2020-03-26T16:55:31Z
dc.date.available2020-03-26T16:55:31Z
dc.date.issued2004
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe current-voltage (I-V) characteristics of Ag Schottky contacts on a Bridgman-Stockbarger grown p-type SnSe layered semiconducting material have been measured over the temperature range of 80-350 K. Their analysis based on the thermionic emission (TE) theory has revealed an abnormal decrease of zero-bias barrier height and increase of ideality factor at lower temperatures. This behaviour has been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the interface. The inhomogeneities are considered to have Gaussian distribution with a mean barrier height of (Phi) over bar (b0) 0.610 eV and standard deviation of sigma(s0) = 0.075 V at zero-bias. Furthermore, the mean barrier height and the Richardson constant values were obtained by means of the modified Richardson plot, In(I-0/T-2) - (q(2)sigma(s0)(2)/2k(2)T(2)) versus 1000/T, as 0.603 eV and 7.72 A K-2 cm(-2) respectively, of which latter is close to its theoretical value of 18 A K-2 cm(-2) used for the determination of the zero-bias barrier height. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Schottky barrier on p-type SnSe can be successfully explained on the basis of TE mechanism with Gaussian distribution of the barrier heights.en_US
dc.identifier.endpage1097en_US
dc.identifier.issn0268-1242en_US
dc.identifier.issn1361-6641en_US
dc.identifier.issue9en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1092en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12395/19224
dc.identifier.volume19en_US
dc.identifier.wosWOS:000223819400007en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.ispartofSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.titleTemperature-dependent barrier characteristics of Ag/p-SnSe Schottky diodes based on I-V-T measurementsen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
tuluolu2004.pdf
Boyut:
202.01 KB
Biçim:
Adobe Portable Document Format
Açıklama:
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu