Temperature dependence of current-voltage characteristics of Ag/p-SnS Schottky barrier diodes

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dc.contributor.authorSahin, M
dc.contributor.authorSafak, H
dc.contributor.authorTugluoglu, N
dc.contributor.authorKaradeniz, S
dc.date.accessioned2020-03-26T16:58:06Z
dc.date.available2020-03-26T16:58:06Z
dc.date.issued2005
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe current-voltage (I-V)measurements on Ag/p-SnS Schottky barrier diodes in the temperature range 100-300 K were carried out. It has been found that all contacts are of Schottky type. The ideality factor and the apparent barrier height calculated by using thermionic emission (TE) theory were found to be strongly temperature dependent. The I-V curves is fitted by the equation based on thermionic emission theory, but the zero-bias barrier height (Phi(B0)) decreases and the ideality factor (n) increases with decreasing temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy of 0.32 eV. It is shown that the values of R, estimated from Cheung's method were strongly temperature dependent and decreased with increasing temperature. From the reverse-bias I-V graphs. it is found that the experimental carrier density (N-A) values increased with increasing temperature. (c) 2004 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.apsusc.2004.09.017en_US
dc.identifier.endpage418en_US
dc.identifier.issn0169-4332en_US
dc.identifier.issue03.04.2020en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage412en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2004.09.017
dc.identifier.urihttps://hdl.handle.net/20.500.12395/19902
dc.identifier.volume242en_US
dc.identifier.wosWOS:000227853200028en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofAPPLIED SURFACE SCIENCEen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectschottky barrier diodeen_US
dc.subjectIV-VI layered semiconductor compoundsen_US
dc.subjectI-V characteristicsen_US
dc.titleTemperature dependence of current-voltage characteristics of Ag/p-SnS Schottky barrier diodesen_US
dc.typeArticleen_US

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