The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode

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dc.contributor.authorYıldırım, Murat.
dc.contributor.authorKocyigit, Adem.
dc.contributor.authorSarılmaz, Adem.
dc.contributor.authorOzel, Faruk.
dc.date.accessioned2020-03-26T20:19:26Z
dc.date.available2020-03-26T20:19:26Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Biyoteknoloji Bölümüen_US
dc.description.abstractCuSbS2 (Chalcostibite) crystals were synthesized by the hot-injection method as triangular and spherical shaped structures. The crystals were inserted by spin coating technique as interfacial layers between Au metal and p-Si to investigate their electrical and photoresponse properties via I-V measurements under various light intensities. The XRD measurements were performed to show the crystalline structure of the spherical and triangular CuSbS2. The TEM images confirmed the triangular and spherical particle structures of the CuSbS2 crystals. The I-V measurements were performed under dark, 20-100mW light intensities with 20mW interval for spherical and triangular CuSbS2 photodiodes. In addition, diode parameters were extracted and discussed in the details. The results highlighted that triangular and spherical shaped structures have good photoresponse to the illumination and can be employed in the photodiode and photodetector applications.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [17401159]; TUBITAK (The Scientific and Technological Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [217M212]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the research Project Number 17401159 and TUBITAK (The Scientific and Technological Research Council of Turkey) under project number 217M212.en_US
dc.identifier.citationYıldırım, M., Kocyigit, A., Sarılmaz, A., Ozel, F. (2019). The Effect of the Triangular and Spherical Shaped CuSbS2 Structure on the Electrical Properties of Au/CuSbS2 /p-Si Photodiode. Journal of Materials Science: Materials in Electronics, 30(1), 332-339.
dc.identifier.doi10.1007/s10854-018-0297-1en_US
dc.identifier.endpage339en_US
dc.identifier.issn0957-4522en_US
dc.identifier.issn1573-482Xen_US
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage332en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-018-0297-1
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38266
dc.identifier.volume30en_US
dc.identifier.wosWOS:000456048800035en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYıldırım, Murat.
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectCuSbS2
dc.subjectAu/CuSbS2/p-Si photodiode
dc.titleThe effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiodeen_US
dc.typeArticleen_US

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