The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices

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dc.contributor.authorDökme, İlbilge
dc.contributor.authorTunç, Tuncay
dc.contributor.authorUslu, İbrahim
dc.contributor.authorAltındal, Şemsettin
dc.date.accessioned2020-03-26T18:16:34Z
dc.date.available2020-03-26T18:16:34Z
dc.date.issued2011
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractMetal/polyvinyl alcohol/n-type silicon Schottky barrier (SB) devices have been fabricated in this study. The importance of this study is that PVA (Co, Zn doped) nanofiber film as an interfacial layer was formed by the electrospinning technique on n-type silicon substrate. The forward and reverse bias current-voltage (I-V) characteristics of this device were measured at room temperature. The Phi(Bo) value of about 0.749 eV obtained from I-V characteristics indicates that the contact potential barrier exists at the interface between organic and inorganic semiconductor layer, that is, PVA/n-Si interface. The variation in the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the Au/PVA (Co. Zn doped)/n-Si SB devices have been systematically investigated as a function of frequencies in the frequency range of 2 kHz-2 MHz at room temperature. The effects of density of interface states (N-ss) and series resistance (R-s) on I-V, C-V and G/omega-V characteristics were investigated. The high-frequency capacitance (C-m) and conductance (G(m)/omega) values measured under reverse bias were corrected to decrease the effects of series resistance. These results show that the locations of interface states between Si/PVA and series resistance have a significant effect on electrical characteristics of the Au/PVA (Co, Zn doped)/n-Si SB devices. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.synthmet.2011.01.002en_US
dc.identifier.endpage480en_US
dc.identifier.issn0379-6779en_US
dc.identifier.issue05.06.2020en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage474en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.synthmet.2011.01.002
dc.identifier.urihttps://hdl.handle.net/20.500.12395/26891
dc.identifier.volume161en_US
dc.identifier.wosWOS:000288929400019en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofSYNTHETIC METALSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectAu/PVA (Co, Zn-doped)/n-Sien_US
dc.subjectElectrical propertiesen_US
dc.subjectFT-IRen_US
dc.subjectElectrospinning techniqueen_US
dc.titleThe Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devicesen_US
dc.typeArticleen_US

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