Investigation of Current-Voltage and Capacitance-Voltage Characteristics of Ag/Perylene-Monoimide/n-gaas Schottky Diode

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dc.contributor.authorŞimşir, N.
dc.contributor.authorŞafak, H.
dc.contributor.authorYüksel, Ö. F.
dc.contributor.authorKuş, M.
dc.date.accessioned2020-03-26T18:30:45Z
dc.date.available2020-03-26T18:30:45Z
dc.date.issued2012
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractAg/perylene-monoimide(PMI)/n-GaAs Schottky diode was fabricated and the current-voltage (I-V) characteristics at a wide temperature range between 75 and 350 K and also the capacitance-voltage (C-V) characteristics at room temperature for 1 MHz have been analyzed in detail. The measured I-V characteristics exhibit a good rectification behavior at all temperature values. By using standard analysis methods, the ideality factor and the barrier height are deduced from the experimental data and also the variations of these parameters with the temperature are analyzed. In addition, by means of the Cheung and Cheung method, the series resistance and some other electrical properties are calculated for the diode. Finally, capacitance-voltage characteristics of device have been analyzed at the room temperature. From analyzing the capacitance measurements, Schottky barrier height is determined and then compared with the value which calculated from the I-V measurements at room temperature. Also, the concentration of ionized donors, built-in potential and some other parameters of diode are found using C-V characteristics. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [11201015]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the research project number 11201015.en_US
dc.identifier.citationKuş, M., Yüksel, Ö. F., Şafak, H., Şimşir, N., (2012). Investigation of Current-Voltage and Capacitance-Voltage Characteristics of Ag/Perylene-Monoimide/n-gaas Schottky Diode. Current Applied Physics, 12(6), 1510-1514. Doi:10.1016/j.cap.2012.04.028
dc.identifier.doi10.1016/j.cap.2012.04.028en_US
dc.identifier.endpage1514en_US
dc.identifier.issn1567-1739en_US
dc.identifier.issn1878-1675en_US
dc.identifier.issue6en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1510en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.cap.2012.04.028
dc.identifier.urihttps://hdl.handle.net/20.500.12395/28159
dc.identifier.volume12en_US
dc.identifier.wosWOS:000306420500018en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorŞimşir, N.
dc.institutionauthorŞafak, H.
dc.institutionauthorYüksel, Ö. F.
dc.institutionauthorKuş, M.
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectOrganic semiconductorsen_US
dc.subjectPeryleneen_US
dc.subjectMetal-semiconductor contacten_US
dc.subjectGaAsen_US
dc.titleInvestigation of Current-Voltage and Capacitance-Voltage Characteristics of Ag/Perylene-Monoimide/n-gaas Schottky Diodeen_US
dc.typeArticleen_US

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