Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions
Yükleniyor...
Dosyalar
Tarih
2019
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
SPRINGER
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this work, ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes has been produced, CdS and CZTS thin film layers of the diode have been produced on ITO glass at room temperature using PLD technique. It has been produced CZTS thin films that have a polycrystalline structure that were annealed at the sulfurization temperatures of 325 degrees C, 350 degrees C and 375 degrees C when as-grown CZTS thin film has the amorphous structure. CdS thin films have been grown on substrate at room temperature in 15, 20 and 25 min that have polycrystalline structures. Then, CdS thin film deposited for 20 min was annealed at 200 degrees C temperature and, has better crystal structure compared to other thin films. Diodes have been composed of CZTS thin film annealed in 375 degrees C, CdS thin film was grown during 20 min and, then annealed at 200 degrees C temperature. According to J-V characteristics of diode, diodes exhibit some rectification behaviour in dark and show a photo-electric property under illumination conditions. In this article, the ideality factors of diodes in dark condition have been calculated, their electrical parameters of J(sc), V-oc, FF and eta under the illumination condition have been determined and these electrical properties have been discussed in details.
Açıklama
Anahtar Kelimeler
Diode, CZTS, CdS, PLD, Ideality factor, Efficiency
Kaynak
OPTICAL AND QUANTUM ELECTRONICS
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
51
Sayı
11
Künye
Gezgin, S. Y., Kiliç, H. Ş. (2019). Determination of Electrical Parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag Heterojunction Diodes in Dark and Illumination Conditions. Optical and Quantum Electronics, 51(11), 360.
