Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions

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dc.contributor.authorGezgin, Serap Yiğit.
dc.contributor.authorKiliç, Hamdi Şükür.
dc.date.accessioned2020-03-26T20:13:18Z
dc.date.available2020-03-26T20:13:18Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this work, ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes has been produced, CdS and CZTS thin film layers of the diode have been produced on ITO glass at room temperature using PLD technique. It has been produced CZTS thin films that have a polycrystalline structure that were annealed at the sulfurization temperatures of 325 degrees C, 350 degrees C and 375 degrees C when as-grown CZTS thin film has the amorphous structure. CdS thin films have been grown on substrate at room temperature in 15, 20 and 25 min that have polycrystalline structures. Then, CdS thin film deposited for 20 min was annealed at 200 degrees C temperature and, has better crystal structure compared to other thin films. Diodes have been composed of CZTS thin film annealed in 375 degrees C, CdS thin film was grown during 20 min and, then annealed at 200 degrees C temperature. According to J-V characteristics of diode, diodes exhibit some rectification behaviour in dark and show a photo-electric property under illumination conditions. In this article, the ideality factors of diodes in dark condition have been calculated, their electrical parameters of J(sc), V-oc, FF and eta under the illumination condition have been determined and these electrical properties have been discussed in details.en_US
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [1649B031503748]; Selcuk University Scientific Project Coordination office [18401124, 15201070]en_US
dc.description.sponsorshipAuthors kindly would like to thank: Scientific and Technical Research Council of Turkey (TUBITAK) for financial support via Grant No. 1649B031503748; Selcuk University, High Technology Research and Application Center for supplying with Infrastructure; Selcuk University Scientific Project Coordination office for grands via projects with references of 18401124 and 15201070.en_US
dc.identifier.citationGezgin, S. Y., Kiliç, H. Ş. (2019). Determination of Electrical Parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag Heterojunction Diodes in Dark and Illumination Conditions. Optical and Quantum Electronics, 51(11), 360.
dc.identifier.doi10.1007/s11082-019-2079-2en_US
dc.identifier.issn0306-8919en_US
dc.identifier.issn1572-817Xen_US
dc.identifier.issue11en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s11082-019-2079-2
dc.identifier.urihttps://hdl.handle.net/20.500.12395/37664
dc.identifier.volume51en_US
dc.identifier.wosWOS:000492409000001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorGezgin, Serap Yiğit.
dc.institutionauthorKiliç, Hamdi Şükür.
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofOPTICAL AND QUANTUM ELECTRONICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectDiodeen_US
dc.subjectCZTSen_US
dc.subjectCdSen_US
dc.subjectPLDen_US
dc.subjectIdeality factoren_US
dc.subjectEfficiencyen_US
dc.titleDetermination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditionsen_US
dc.typeArticleen_US

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