Improvement in electrical performance of half-metallic Fe3O4/GaAs structures using pyrolyzed polymer film as buffer layer
Küçük Resim Yok
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
TAYLOR & FRANCIS LTD
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this work, the Fe3O4 magnetic nanoparticles (MNPs) were synthesized by a colloidal method. TEM images reveal that Fe3O4 MNPs are spherical in shape with a narrow size distribution in the range of 6-7 nm. These MNPs were used in the fabrication of two types of n-GaAs-based structures: (i) Fe3O4/n-GaAs (reference); and (ii) Fe3O4/PPF/n-GaAs. We present that carbon-based pyrolyzed polymer films (PPFs), as a buffer layer, can control the electrical characteristics of a conventional Fe3O4/n-GaAs device. The behaviour of the apparent barrier height and ideality factor with the interfacial layer due to the presence of the interface state density is discussed. PPF raises the barrier height in a Fe3O4/PPF/n-GaAs half-metallic/insulator/semiconductor (h-MIS) device as high as 0.62 +/- 0.002 eV. Furthermore, Fe3O4/PPF interfaces exhibit unique electronic properties including high-quality interface, low series resistance (from 17.73 k Omega to 85.66 Omega) and extremely low interface state density (1.76 x 10(12) eV(-1) cm(-2)). Compared to the electrical performance for the Fe3O4/n-GaAs junction, that for the Fe3O4/PPF/n-GaAs junction was enhanced.
Açıklama
Anahtar Kelimeler
half-metallic/insulator/semiconductor (h-MIS) structures, Fe3O4 nanoparticles, pyrolyzed polymer film, I-V measurements
Kaynak
PHILOSOPHICAL MAGAZINE
WoS Q Değeri
Q1
Scopus Q Değeri
Q3
Cilt
94
Sayı
23
