Improvement in electrical performance of half-metallic Fe3O4/GaAs structures using pyrolyzed polymer film as buffer layer

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dc.contributor.authorAkın, Seçkin
dc.contributor.authorÖzel, Faruk
dc.contributor.authorKuş, Mahmut
dc.contributor.authorSönmezoğlu, Savaş
dc.date.accessioned2020-03-26T18:51:03Z
dc.date.available2020-03-26T18:51:03Z
dc.date.issued2014
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn this work, the Fe3O4 magnetic nanoparticles (MNPs) were synthesized by a colloidal method. TEM images reveal that Fe3O4 MNPs are spherical in shape with a narrow size distribution in the range of 6-7 nm. These MNPs were used in the fabrication of two types of n-GaAs-based structures: (i) Fe3O4/n-GaAs (reference); and (ii) Fe3O4/PPF/n-GaAs. We present that carbon-based pyrolyzed polymer films (PPFs), as a buffer layer, can control the electrical characteristics of a conventional Fe3O4/n-GaAs device. The behaviour of the apparent barrier height and ideality factor with the interfacial layer due to the presence of the interface state density is discussed. PPF raises the barrier height in a Fe3O4/PPF/n-GaAs half-metallic/insulator/semiconductor (h-MIS) device as high as 0.62 +/- 0.002 eV. Furthermore, Fe3O4/PPF interfaces exhibit unique electronic properties including high-quality interface, low series resistance (from 17.73 k Omega to 85.66 Omega) and extremely low interface state density (1.76 x 10(12) eV(-1) cm(-2)). Compared to the electrical performance for the Fe3O4/n-GaAs junction, that for the Fe3O4/PPF/n-GaAs junction was enhanced.en_US
dc.identifier.doi10.1080/14786435.2014.927599en_US
dc.identifier.endpage2691en_US
dc.identifier.issn1478-6435en_US
dc.identifier.issn1478-6443en_US
dc.identifier.issue23en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage2678en_US
dc.identifier.urihttps://dx.doi.org/10.1080/14786435.2014.927599
dc.identifier.urihttps://hdl.handle.net/20.500.12395/30917
dc.identifier.volume94en_US
dc.identifier.wosWOS:000340051400006en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTAYLOR & FRANCIS LTDen_US
dc.relation.ispartofPHILOSOPHICAL MAGAZINEen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjecthalf-metallic/insulator/semiconductor (h-MIS) structuresen_US
dc.subjectFe3O4 nanoparticlesen_US
dc.subjectpyrolyzed polymer filmen_US
dc.subjectI-V measurementsen_US
dc.titleImprovement in electrical performance of half-metallic Fe3O4/GaAs structures using pyrolyzed polymer film as buffer layeren_US
dc.typeArticleen_US

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