Temperature Dependent Dielectric Properties of Schottky Diodes with Organic Interfacial Layer
Yükleniyor...
Dosyalar
Tarih
2010
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
NATL INST OPTOELECTRONICS
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and the ac electrical conductivity (sigma(ac)) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of epsilon', epsilon '' and tan delta were found a function of temperature. The ac electrical conductivity (sigma(ac)) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.
Açıklama
Anahtar Kelimeler
Au/PVA(Co,Ni-Doped)/n-Si, Polyvinyl Alcohol, Dielectric Properties, Electrospining Technique
Kaynak
Optoelectronics and Advanced Materials-Rapid Communications
WoS Q Değeri
Q4
Scopus Q Değeri
Q4
Cilt
4
Sayı
8
Künye
Dökme, İ., Tunç, T., Altındal, S., Uslu, İ., (2010). Temperature Dependent Dielectric Properties of Schottky Diodes with Organic Interfacial Layer. Optoelectronics and Advanced Materials-Rapid Communications, 4(8), 1225-1228.
