Temperature Dependent Dielectric Properties of Schottky Diodes with Organic Interfacial Layer

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dc.contributor.authorDökme, İ.
dc.contributor.authorTunç, T.
dc.contributor.authorAltındal, S.
dc.contributor.authorUslu, İ.
dc.date.accessioned2020-03-26T18:05:08Z
dc.date.available2020-03-26T18:05:08Z
dc.date.issued2010
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and the ac electrical conductivity (sigma(ac)) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of epsilon', epsilon '' and tan delta were found a function of temperature. The ac electrical conductivity (sigma(ac)) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.en_US
dc.identifier.citationDökme, İ., Tunç, T., Altındal, S., Uslu, İ., (2010). Temperature Dependent Dielectric Properties of Schottky Diodes with Organic Interfacial Layer. Optoelectronics and Advanced Materials-Rapid Communications, 4(8), 1225-1228.
dc.identifier.endpage1228en_US
dc.identifier.issn1842-6573en_US
dc.identifier.issue8en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage1225en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12395/25316
dc.identifier.volume4en_US
dc.identifier.wosWOS:000281734800040en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorUslu, İ.
dc.language.isoenen_US
dc.publisherNATL INST OPTOELECTRONICSen_US
dc.relation.ispartofOptoelectronics and Advanced Materials-Rapid Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectAu/PVA(Co,Ni-Doped)/n-Sien_US
dc.subjectPolyvinyl Alcoholen_US
dc.subjectDielectric Propertiesen_US
dc.subjectElectrospining Techniqueen_US
dc.titleTemperature Dependent Dielectric Properties of Schottky Diodes with Organic Interfacial Layeren_US
dc.typeArticleen_US

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