Characterization of Al/In:ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers
Küçük Resim Yok
Tarih
2018
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
ELSEVIER SCIENCE SA
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The detection of the light by a device is so important for industrial applications such as energy harvesting, sensing and switching. For that aim, we have introduced various In doped (0%, 0.1%, 0.5% and 1.0%) nanostructure ZnO thin films which was prepared by the sol-gel spin coating technique as interfacial materials between the Al metal and p-type Si for investigation photodetection properties of the material. According to morphological results of the In doped ZnO thin films at AFM, undoped and In doped ZnO thin films formed as fiber like structures. The obtained optical band gap energy for undoped, 0.1%, 0.5% and 1.0% In doped ZnO thin films were determined as 3.293 eV, 3.283 eV, 3.272 eV and 3.263 eV, respectively. The Al/In:ZnO/p-Si devices were characterized with I-V and C-V measurements. The I-V data was acquired under various illumination conditions to see the response of the devices to the light. The I-V characteristics have revealed that the devices have high ideality factors and, their values usually increased with increasing In doping level, but the rectifying properties decreased. In addition, barrier heights and series resistance values decreased with increasing In doping level. Also, the device parameters were calculated via Cheung and Norde methods for accuracy of the results. The current transient measurements highlighted that In doping provided to increase of light response. The C-V measurements have imparted that the capacitance values are strong function of the frequency and voltage for various In doping level. The devices can be thought and improved as photodiode and photodetector applications in the industry. (C) 2018 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
ZnO thin film, Al/In:ZnO/p-Si, I-V characteristics, Photodiode, Photodetector
Kaynak
JOURNAL OF ALLOYS AND COMPOUNDS
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
768
