Characterization of Al/In:ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers

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dc.contributor.authorYildirim, Murat
dc.contributor.authorKocyigit, Adem
dc.date.accessioned2020-03-26T19:53:03Z
dc.date.available2020-03-26T19:53:03Z
dc.date.issued2018
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe detection of the light by a device is so important for industrial applications such as energy harvesting, sensing and switching. For that aim, we have introduced various In doped (0%, 0.1%, 0.5% and 1.0%) nanostructure ZnO thin films which was prepared by the sol-gel spin coating technique as interfacial materials between the Al metal and p-type Si for investigation photodetection properties of the material. According to morphological results of the In doped ZnO thin films at AFM, undoped and In doped ZnO thin films formed as fiber like structures. The obtained optical band gap energy for undoped, 0.1%, 0.5% and 1.0% In doped ZnO thin films were determined as 3.293 eV, 3.283 eV, 3.272 eV and 3.263 eV, respectively. The Al/In:ZnO/p-Si devices were characterized with I-V and C-V measurements. The I-V data was acquired under various illumination conditions to see the response of the devices to the light. The I-V characteristics have revealed that the devices have high ideality factors and, their values usually increased with increasing In doping level, but the rectifying properties decreased. In addition, barrier heights and series resistance values decreased with increasing In doping level. Also, the device parameters were calculated via Cheung and Norde methods for accuracy of the results. The current transient measurements highlighted that In doping provided to increase of light response. The C-V measurements have imparted that the capacitance values are strong function of the frequency and voltage for various In doping level. The devices can be thought and improved as photodiode and photodetector applications in the industry. (C) 2018 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.jallcom.2018.07.295en_US
dc.identifier.endpage1075en_US
dc.identifier.issn0925-8388en_US
dc.identifier.issn1873-4669en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1064en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2018.07.295
dc.identifier.urihttps://hdl.handle.net/20.500.12395/36386
dc.identifier.volume768en_US
dc.identifier.wosWOS:000446320700124en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectZnO thin filmen_US
dc.subjectAl/In:ZnO/p-Sien_US
dc.subjectI-V characteristicsen_US
dc.subjectPhotodiodeen_US
dc.subjectPhotodetectoren_US
dc.titleCharacterization of Al/In:ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layersen_US
dc.typeArticleen_US

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