Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range
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Dosyalar
Tarih
2005
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
ELSEVIER SCIENCE BV
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
This paper summarizes the first results of characteristics parameters obtained from current-voltage (I-V) measurements for Ag/p-SnS and Ag/p-SnSe structure. The reverse and forward bias current-voltage characteristics of Ag Schottky contacts on a Bridgman-Stockbarger grown p-SnS and p-SnSe layered semiconducting material have been measured at various temperatures. We have tried to determine contact properties such as apparent barrier heights Phi(BO), ideality factor n and series resistance R-s. The apparent barrier height and ideality factor calculated by using thermionic emission theory were found to be strongly temperature dependent. Evaluating forward I-V data reveals a decrease at the apparent barrier height, but an increase at the ideality factor with decrease in temperature. It is shown that the values of R-s estimated from Cheung's method were strongly temperature dependent and decreased with increasing temperature. It has been found that both contacts are of Schottky type. (c) 2005 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
SnS, SnSe, schottky barrier, I-V-T, series resistance
Kaynak
MICROELECTRONIC ENGINEERING
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
81
Sayı
1
