Series resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature range

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dc.contributor.authorKaradeniz, S
dc.contributor.authorTugluoglu, N
dc.contributor.authorSahin, M
dc.contributor.authorSafak, H
dc.date.accessioned2020-03-26T16:57:55Z
dc.date.available2020-03-26T16:57:55Z
dc.date.issued2005
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThis paper summarizes the first results of characteristics parameters obtained from current-voltage (I-V) measurements for Ag/p-SnS and Ag/p-SnSe structure. The reverse and forward bias current-voltage characteristics of Ag Schottky contacts on a Bridgman-Stockbarger grown p-SnS and p-SnSe layered semiconducting material have been measured at various temperatures. We have tried to determine contact properties such as apparent barrier heights Phi(BO), ideality factor n and series resistance R-s. The apparent barrier height and ideality factor calculated by using thermionic emission theory were found to be strongly temperature dependent. Evaluating forward I-V data reveals a decrease at the apparent barrier height, but an increase at the ideality factor with decrease in temperature. It is shown that the values of R-s estimated from Cheung's method were strongly temperature dependent and decreased with increasing temperature. It has been found that both contacts are of Schottky type. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.mee.2005.04.006en_US
dc.identifier.endpage131en_US
dc.identifier.issn0167-9317en_US
dc.identifier.issn1873-5568en_US
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage125en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.mee.2005.04.006
dc.identifier.urihttps://hdl.handle.net/20.500.12395/19870
dc.identifier.volume81en_US
dc.identifier.wosWOS:000231333400017en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofMICROELECTRONIC ENGINEERINGen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectSnSen_US
dc.subjectSnSeen_US
dc.subjectschottky barrieren_US
dc.subjectI-V-Ten_US
dc.subjectseries resistanceen_US
dc.titleSeries resistance calculation for Ag contacts on single crystal layered p-SnS and p-SnSe compound semiconductors in the wide temperature rangeen_US
dc.typeArticleen_US

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