The C-V characteristics of TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag heterojunction devices
Küçük Resim Yok
Tarih
2020
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Physical Society of the Republic of China
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The TiO2/p-Si/Ag, graphene (GNR) doped TiO2/p-Si/Ag and multi-walled carbon nanotube (MWCNT) doped TiO2/p-Si/Ag heterojunction devices were fabricated by electrospinning technique at same conditions. Their structural, morphological properties, thermal analyses (TGA), and capacitance voltage characteristics were studied and compared. The undoped, GNR and MWCNT doped TiO2 structures obtained successfully according to XRD measurements. Morphological properties of the undoped, GNR and MWCNT doped TiO2 composite structures have rod or ribbon like structures. The TGA result confirmed the GNR and MWCNT doped TiO2 structures. The C-V and G-V measurements were employed for electrical characterization of the TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag devices for various frequencies at room temperatures. The results imparted that the capacitance and conductance behaviors of all devices are strong functions of the frequency and voltage. The electrical parameters were calculated from C?2-V plots of the heterojunction devices and compared for three devices. The transient photocapacitance plots revealed that the devices can be employed for optical communication applications. © 2020 The Physical Society of the Republic of China (Taiwan)
Açıklama
Anahtar Kelimeler
Graphene, Multi-walled carbon nanotube, Photocapacitance, TiO2/p-Si/Ag
Kaynak
Chinese Journal of Physics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
64
