The C-V characteristics of TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag heterojunction devices

Basit Öğe Kaydı
dc.contributor.authorErdal M.O.
dc.contributor.authorKocyigit A.
dc.contributor.authorYıldırım M.
dc.date.accessioned2020-03-26T20:20:57Z
dc.date.available2020-03-26T20:20:57Z
dc.date.issued2020
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe TiO2/p-Si/Ag, graphene (GNR) doped TiO2/p-Si/Ag and multi-walled carbon nanotube (MWCNT) doped TiO2/p-Si/Ag heterojunction devices were fabricated by electrospinning technique at same conditions. Their structural, morphological properties, thermal analyses (TGA), and capacitance voltage characteristics were studied and compared. The undoped, GNR and MWCNT doped TiO2 structures obtained successfully according to XRD measurements. Morphological properties of the undoped, GNR and MWCNT doped TiO2 composite structures have rod or ribbon like structures. The TGA result confirmed the GNR and MWCNT doped TiO2 structures. The C-V and G-V measurements were employed for electrical characterization of the TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag devices for various frequencies at room temperatures. The results imparted that the capacitance and conductance behaviors of all devices are strong functions of the frequency and voltage. The electrical parameters were calculated from C?2-V plots of the heterojunction devices and compared for three devices. The transient photocapacitance plots revealed that the devices can be employed for optical communication applications. © 2020 The Physical Society of the Republic of China (Taiwan)en_US
dc.identifier.doi10.1016/j.cjph.2019.12.021en_US
dc.identifier.endpage173en_US
dc.identifier.issn0577-9073en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage163en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.cjph.2019.12.021
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38706
dc.identifier.volume64en_US
dc.identifier.wosWOS:000522637000015en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPhysical Society of the Republic of Chinaen_US
dc.relation.ispartofChinese Journal of Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectGrapheneen_US
dc.subjectMulti-walled carbon nanotubeen_US
dc.subjectPhotocapacitanceen_US
dc.subjectTiO2/p-Si/Agen_US
dc.titleThe C-V characteristics of TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag heterojunction devicesen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

Scopus İndeksli Yayınlar Koleksiyonu
WoS İndeksli Yayınlar Koleksiyonu