Analysis of I-V Measurements on Ag/p-SnS and Ag/p-SnSe Schottky Barriers
Yükleniyor...
Dosyalar
Tarih
2002
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Pergamon-Elsevier Science Ltd
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
In this study, we have performed current-voltage (I-V) measurements on single crystals p-SnS and p-SnSe at different temperatures in the vicinity of room temperature. These compound semiconductors belong to IV-VI layered material class. Hence, they show strong anisotropy for all properties. We realized all measurements on the easy cleavage plane perpendicular c-axis. From I-V characteristics, we have tried to determine some intrinsic and contact properties such as barrier heights, diode ideality factors and carrier concentrations. It has been found that both contacts are in Schottky type, while Ag/p-SnSe structures has showed better diode behavior.
Açıklama
Anahtar Kelimeler
I-V characteristics, IV-VI layered semiconductor compounds, Schottky barriers
Kaynak
Solid-state Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
46
Sayı
1
Künye
Şafak, H., Şahin, M., Yüksel, Ö. F., (2002). Analysis of I-V Measurements on Ag/p-SnS and Ag/p-SnSe Schottky Barriers. Solid-state Electronics, (46), 49-52. Doi: 10.1016/S0038-1101(01)00273-8
