Analysis of I-V Measurements on Ag/p-SnS and Ag/p-SnSe Schottky Barriers

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dc.contributor.authorŞafak, Haluk
dc.contributor.authorŞahin, Mehmet
dc.contributor.authorYüksel, Ömer Faruk
dc.date.accessioned2020-03-26T16:38:39Z
dc.date.available2020-03-26T16:38:39Z
dc.date.issued2002
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn this study, we have performed current-voltage (I-V) measurements on single crystals p-SnS and p-SnSe at different temperatures in the vicinity of room temperature. These compound semiconductors belong to IV-VI layered material class. Hence, they show strong anisotropy for all properties. We realized all measurements on the easy cleavage plane perpendicular c-axis. From I-V characteristics, we have tried to determine some intrinsic and contact properties such as barrier heights, diode ideality factors and carrier concentrations. It has been found that both contacts are in Schottky type, while Ag/p-SnSe structures has showed better diode behavior.en_US
dc.identifier.citationŞafak, H., Şahin, M., Yüksel, Ö. F., (2002). Analysis of I-V Measurements on Ag/p-SnS and Ag/p-SnSe Schottky Barriers. Solid-state Electronics, (46), 49-52. Doi: 10.1016/S0038-1101(01)00273-8
dc.identifier.doi10.1016/S0038-1101(01)00273-8en_US
dc.identifier.endpage52en_US
dc.identifier.issn0038-1101en_US
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage49en_US
dc.identifier.urihttps://dx.doi.org/10.1016/S0038-1101(01)00273-8
dc.identifier.urihttps://hdl.handle.net/20.500.12395/17885
dc.identifier.volume46en_US
dc.identifier.wosWOS:000173367200008en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorŞafak, Haluk
dc.institutionauthorŞahin, Mehmet
dc.institutionauthorYüksel, Ömer Faruk
dc.language.isoenen_US
dc.publisherPergamon-Elsevier Science Ltden_US
dc.relation.ispartofSolid-state Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectI-V characteristicsen_US
dc.subjectIV-VI layered semiconductor compoundsen_US
dc.subjectSchottky barriersen_US
dc.titleAnalysis of I-V Measurements on Ag/p-SnS and Ag/p-SnSe Schottky Barriersen_US
dc.typeArticleen_US

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