Oscillator strengths for the intersubband transitions in a CdS-SiO2 quantum dot with hydrogenic impurity
Küçük Resim Yok
Tarih
2007
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
ELSEVIER SCIENCE BV
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
In this study, we have calculated the oscillator strengths for intersubband electronic transitions associated with an on-center impurity in a spherical quantum dot. Numerical calculations have been performed for both infinite confinement case and for different finite confining potential values in a spherical CdS/SiO2 quantum dot. Also, for comparison purpose, oscillator strengths for a spherical ZnS/SiO2 quantum dot with an infinite confinement potential are evaluated. (c) 2006 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
oscillator strengths, quantum dots, impurity, intersubband transitions
Kaynak
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
36
Sayı
1
