Oscillator strengths for the intersubband transitions in a CdS-SiO2 quantum dot with hydrogenic impurity
dc.contributor.author | Yilmaz, S. | |
dc.contributor.author | Safak, H. | |
dc.date.accessioned | 2020-03-26T17:17:48Z | |
dc.date.available | 2020-03-26T17:17:48Z | |
dc.date.issued | 2007 | |
dc.department | Selçuk Üniversitesi | en_US |
dc.description.abstract | In this study, we have calculated the oscillator strengths for intersubband electronic transitions associated with an on-center impurity in a spherical quantum dot. Numerical calculations have been performed for both infinite confinement case and for different finite confining potential values in a spherical CdS/SiO2 quantum dot. Also, for comparison purpose, oscillator strengths for a spherical ZnS/SiO2 quantum dot with an infinite confinement potential are evaluated. (c) 2006 Elsevier B.V. All rights reserved. | en_US |
dc.identifier.doi | 10.1016/j.physe.2006.07.040 | en_US |
dc.identifier.endpage | 44 | en_US |
dc.identifier.issn | 1386-9477 | en_US |
dc.identifier.issue | 1 | en_US |
dc.identifier.scopusquality | Q2 | en_US |
dc.identifier.startpage | 40 | en_US |
dc.identifier.uri | https://dx.doi.org/10.1016/j.physe.2006.07.040 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12395/21508 | |
dc.identifier.volume | 36 | en_US |
dc.identifier.wos | WOS:000243851800006 | en_US |
dc.identifier.wosquality | Q3 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.relation.ispartof | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.selcuk | 20240510_oaig | en_US |
dc.subject | oscillator strengths | en_US |
dc.subject | quantum dots | en_US |
dc.subject | impurity | en_US |
dc.subject | intersubband transitions | en_US |
dc.title | Oscillator strengths for the intersubband transitions in a CdS-SiO2 quantum dot with hydrogenic impurity | en_US |
dc.type | Article | en_US |