Temperature-dependent barrier characteristics of Ag/p-SnS Schottky barrier diodes
Yükleniyor...
Dosyalar
Tarih
2004
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
IOP PUBLISHING LTD
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
The current-voltage (I-V) characteristics of Ag/p-SnS Schottky barrier diodes were measured in the temperature range of 100-300 K and have been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at the interface. It is shown that the occurrence of a Gaussian distribution of the BHs is responsible for the decrease of the apparent barrier height Phi(B0), increase of the ideality factor n and nonlinearity in the activation energy plot at low temperatures. The inhomogeneities are considered to have a Gaussian distribution with a mean barrier height of (Phi) over bar (b0) = 0.649 eV and a standard deviation of sigma(s0) = 0.093 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained as 0.642 eV and 12.89 A K-2 cm(-2), respectively, by means of the modified Richardson plot, In(I-0/ T-2) - (q(2)sigma(s0)(2)/2k(2)T(2)) versus 10(3)/T. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Schottky barrier on p-type SnS can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.
Açıklama
Anahtar Kelimeler
Kaynak
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
WoS Q Değeri
Q1
Scopus Q Değeri
Q2
Cilt
19
Sayı
9
