Temperature-dependent barrier characteristics of Ag/p-SnS Schottky barrier diodes

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dc.contributor.authorKaradeniz, S
dc.contributor.authorSahin, M
dc.contributor.authorTugluoglu, N
dc.contributor.authorSafak, H
dc.date.accessioned2020-03-26T16:55:31Z
dc.date.available2020-03-26T16:55:31Z
dc.date.issued2004
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe current-voltage (I-V) characteristics of Ag/p-SnS Schottky barrier diodes were measured in the temperature range of 100-300 K and have been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at the interface. It is shown that the occurrence of a Gaussian distribution of the BHs is responsible for the decrease of the apparent barrier height Phi(B0), increase of the ideality factor n and nonlinearity in the activation energy plot at low temperatures. The inhomogeneities are considered to have a Gaussian distribution with a mean barrier height of (Phi) over bar (b0) = 0.649 eV and a standard deviation of sigma(s0) = 0.093 V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained as 0.642 eV and 12.89 A K-2 cm(-2), respectively, by means of the modified Richardson plot, In(I-0/ T-2) - (q(2)sigma(s0)(2)/2k(2)T(2)) versus 10(3)/T. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Schottky barrier on p-type SnS can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.en_US
dc.identifier.doi10.1088/0268-1242/19/9/005en_US
dc.identifier.endpage1103en_US
dc.identifier.issn0268-1242en_US
dc.identifier.issn1361-6641en_US
dc.identifier.issue9en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1098en_US
dc.identifier.urihttps://dx.doi.org/10.1088/0268-1242/19/9/005
dc.identifier.urihttps://hdl.handle.net/20.500.12395/19223
dc.identifier.volume19en_US
dc.identifier.wosWOS:000223819400008en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.relation.ispartofSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.titleTemperature-dependent barrier characteristics of Ag/p-SnS Schottky barrier diodesen_US
dc.typeArticleen_US

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