Current-Voltage Analysis of a-Si: H Schottky Diodes
Yükleniyor...
Dosyalar
Tarih
2006
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science Bv
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Direct current (dc)-voltage (I-V) characteristics of the hydrogenated amorphous silicon (a-Si:H) Schottky diode have been measured at different temperatures under dark and light. From the fourth quadrant of illuminated characteristics, fill factor (FF) values were obtained for each temperature measured (173-297 K). We have found that FF increases very little as the temperature is decreased. The measured data from I-V characteristics has been analyzed in detail. In particular, from dark I-V characteristics obtained, the density of state (DOS) near the Fermi level was determined using a simple model based on the space-charge limited current (SCLC). On the other hand, from the illuminated I-V characteristics, the density of carriers was calculated for each temperature using the analysis of diode equation as known. A comparison of the carrier density and the measured photocurrent as a function of the reverse temperature was also made and a good correspondence was obtained.
Açıklama
Anahtar Kelimeler
A-Si: H Schottky diode, fill factor, space-charge limited current, DOS, carrier density
Kaynak
Applied Surface Science
WoS Q Değeri
Q2
Scopus Q Değeri
Q1
Cilt
252
Sayı
Künye
Şahin, M., Durmuş, H., Kaplan, R., (2006). Current-Voltage Analysis of a-Si: H Schottky Diodes. Applied Surface Science, (252), 6269-6274. Doi: 10.1016/j.apsusc.2005.08.034