Current-Voltage Analysis of a-Si: H Schottky Diodes

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dc.contributor.authorŞahin, Mehmet
dc.contributor.authorDurmuş, Haziret
dc.contributor.authorKaplan, Ruhi
dc.date.accessioned2020-03-26T17:03:18Z
dc.date.available2020-03-26T17:03:18Z
dc.date.issued2006
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractDirect current (dc)-voltage (I-V) characteristics of the hydrogenated amorphous silicon (a-Si:H) Schottky diode have been measured at different temperatures under dark and light. From the fourth quadrant of illuminated characteristics, fill factor (FF) values were obtained for each temperature measured (173-297 K). We have found that FF increases very little as the temperature is decreased. The measured data from I-V characteristics has been analyzed in detail. In particular, from dark I-V characteristics obtained, the density of state (DOS) near the Fermi level was determined using a simple model based on the space-charge limited current (SCLC). On the other hand, from the illuminated I-V characteristics, the density of carriers was calculated for each temperature using the analysis of diode equation as known. A comparison of the carrier density and the measured photocurrent as a function of the reverse temperature was also made and a good correspondence was obtained.en_US
dc.identifier.citationŞahin, M., Durmuş, H., Kaplan, R., (2006). Current-Voltage Analysis of a-Si: H Schottky Diodes. Applied Surface Science, (252), 6269-6274. Doi: 10.1016/j.apsusc.2005.08.034
dc.identifier.doi10.1016/j.apsusc.2005.08.034en_US
dc.identifier.endpage6274en_US
dc.identifier.issn0169-4332en_US
dc.identifier.issn1873-5584en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage6269en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2005.08.034
dc.identifier.urihttps://hdl.handle.net/20.500.12395/20415
dc.identifier.volume252en_US
dc.identifier.wosWOS:000239735100023en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorŞahin, Mehmet
dc.institutionauthorDurmuş, Haziret
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectA-Si: H Schottky diodeen_US
dc.subjectfill factoren_US
dc.subjectspace-charge limited currenten_US
dc.subjectDOSen_US
dc.subjectcarrier densityen_US
dc.titleCurrent-Voltage Analysis of a-Si: H Schottky Diodesen_US
dc.typeArticleen_US

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