Temperature Dependent Current-Voltage (I-V) Characteristics of Au/N-Si (111) Schottky Barrier Diodes (SBDS) with Polyvinyl Alcohol (Co, Ni-Doped) Interfacial Layer
Küçük Resim Yok
Tarih
2010
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
NATL INST OPTOELECTRONICS
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Current-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the forward bias 1 V characteristics were found strongly depend on temperature. The forward bias semi-logarithmic I-V curves for the different temperatures have an almost common cross-point at a certain bias voltage. While the value of n decreases, the Phi(Bo) increases with increasing temperature. Therefore, we attempted to draw a Phi(bo) vs q/2kT plot to obtain evidence of a Gaussian distribution of the barrier heights, and to calculate the values of mean barrier height and standard deviation at zero bias, respectively.
Açıklama
Anahtar Kelimeler
I-V Characteristics, Ideality Factor, Barrier Height, Interface States
Kaynak
Optoelectronics and Advanced Materials-Rapid Communications
WoS Q Değeri
Q4
Scopus Q Değeri
Q4
Cilt
4
Sayı
7
Künye
Tunç, T., Dökme, I., Altındal, S., Uslu, I., (2010). Temperature Dependent Current-Voltage (I-V) Characteristics of Au/N-Si (111) Schottky Barrier Diodes (SBDS) with Polyvinyl Alcohol (Co, Ni-Doped) Interfacial Layer. Optoelectronics and Advanced Materials-Rapid Communications, 4(7), 947-950.
