Temperature Dependent Current-Voltage (I-V) Characteristics of Au/N-Si (111) Schottky Barrier Diodes (SBDS) with Polyvinyl Alcohol (Co, Ni-Doped) Interfacial Layer

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dc.contributor.authorTunç, T.
dc.contributor.authorDökme, I.
dc.contributor.authorAltındal, S.
dc.contributor.authorUslu, I.
dc.date.accessioned2020-03-26T18:05:08Z
dc.date.available2020-03-26T18:05:08Z
dc.date.issued2010
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractCurrent-voltage (I-V) characteristics of Au/PVA(Co,Ni-doped)/n-Si (111) SBDs have been investigated in the temperature range of 280-400 K. The zero-bias barrier height (Phi(bo)) and ideality factor (n) determined from the forward bias 1 V characteristics were found strongly depend on temperature. The forward bias semi-logarithmic I-V curves for the different temperatures have an almost common cross-point at a certain bias voltage. While the value of n decreases, the Phi(Bo) increases with increasing temperature. Therefore, we attempted to draw a Phi(bo) vs q/2kT plot to obtain evidence of a Gaussian distribution of the barrier heights, and to calculate the values of mean barrier height and standard deviation at zero bias, respectively.en_US
dc.identifier.citationTunç, T., Dökme, I., Altındal, S., Uslu, I., (2010). Temperature Dependent Current-Voltage (I-V) Characteristics of Au/N-Si (111) Schottky Barrier Diodes (SBDS) with Polyvinyl Alcohol (Co, Ni-Doped) Interfacial Layer. Optoelectronics and Advanced Materials-Rapid Communications, 4(7), 947-950.
dc.identifier.endpage950en_US
dc.identifier.issn1842-6573en_US
dc.identifier.issn2065-3824en_US
dc.identifier.issue7en_US
dc.identifier.scopusqualityQ4en_US
dc.identifier.startpage947en_US
dc.identifier.urihttps://hdl.handle.net/20.500.12395/25315
dc.identifier.volume4en_US
dc.identifier.wosWOS:000281114100010en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorUslu, I.
dc.language.isoenen_US
dc.publisherNATL INST OPTOELECTRONICSen_US
dc.relation.ispartofOptoelectronics and Advanced Materials-Rapid Communicationsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectI-V Characteristicsen_US
dc.subjectIdeality Factoren_US
dc.subjectBarrier Heighten_US
dc.subjectInterface Statesen_US
dc.titleTemperature Dependent Current-Voltage (I-V) Characteristics of Au/N-Si (111) Schottky Barrier Diodes (SBDS) with Polyvinyl Alcohol (Co, Ni-Doped) Interfacial Layeren_US
dc.typeArticleen_US

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