Capacitance and Conductance-Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer
Küçük Resim Yok
Tarih
2017
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
SPRINGER
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We report the interface properties of a perylene-diimide thin film between Au and n-Si substrate fabricated by the spin coating method. The relaxation time (tau) and interface trap density (D (it)) characteristics of the fabricated structure were obtained across various voltage ranges (0.0 V-300 mV) and various frequency ranges (1 kHz-1 MHz). We observed a peak in G (it)/omega versus log (f) plots from 0.0 V to 300 mV. This peak shows the presence of the interface state and its relaxation time. We observed a decrease in values at the same time as an increase in N (ss) values with the increasing applied voltage for the sample. The N (ss) and tau values found to be in the ranges 1.50 x 10(12) eV(-1) cm(-2)-2.83 x 10(12) eV(-1) cm(-2) and 2.83 x 10(-6) s-4.82 x 10(-7) s between 0.0 V and 0.3 V, respectively.
Açıklama
Anahtar Kelimeler
Schottky device, perylene-diimide, spin coating, interface trap density, relaxation time
Kaynak
JOURNAL OF ELECTRONIC MATERIALS
WoS Q Değeri
Q3
Scopus Q Değeri
Q3
Cilt
46
Sayı
2
