Capacitance and Conductance-Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayer

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dc.contributor.authorYuksel, O. F.
dc.contributor.authorKus, M.
dc.contributor.authorYildirim, M.
dc.date.accessioned2020-03-26T19:34:12Z
dc.date.available2020-03-26T19:34:12Z
dc.date.issued2017
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractWe report the interface properties of a perylene-diimide thin film between Au and n-Si substrate fabricated by the spin coating method. The relaxation time (tau) and interface trap density (D (it)) characteristics of the fabricated structure were obtained across various voltage ranges (0.0 V-300 mV) and various frequency ranges (1 kHz-1 MHz). We observed a peak in G (it)/omega versus log (f) plots from 0.0 V to 300 mV. This peak shows the presence of the interface state and its relaxation time. We observed a decrease in values at the same time as an increase in N (ss) values with the increasing applied voltage for the sample. The N (ss) and tau values found to be in the ranges 1.50 x 10(12) eV(-1) cm(-2)-2.83 x 10(12) eV(-1) cm(-2) and 2.83 x 10(-6) s-4.82 x 10(-7) s between 0.0 V and 0.3 V, respectively.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [11401115]en_US
dc.description.sponsorshipThis work was supported by Selcuk University BAP office with the research Project Number 11401115.en_US
dc.identifier.doi10.1007/s11664-016-4999-yen_US
dc.identifier.endpage887en_US
dc.identifier.issn0361-5235en_US
dc.identifier.issn1543-186Xen_US
dc.identifier.issue2en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage882en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s11664-016-4999-y
dc.identifier.urihttps://hdl.handle.net/20.500.12395/34858
dc.identifier.volume46en_US
dc.identifier.wosWOS:000392291200024en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJOURNAL OF ELECTRONIC MATERIALSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectSchottky deviceen_US
dc.subjectperylene-diimideen_US
dc.subjectspin coatingen_US
dc.subjectinterface trap densityen_US
dc.subjectrelaxation timeen_US
dc.titleCapacitance and Conductance-Frequency Characteristics of Au/n-Si Schottky Structure with Perylene-Diimide (PDI) Organic Interlayeren_US
dc.typeArticleen_US

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