The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

Cu2WSe4 nanosheets were synthesized by the hot-injection method and put as interfacial layers between Au metal and p-Si by spin coating technique to investigate their photoresponse and capacitor properties via I-V and C-V measurements, respectively. The XRD were operated to confirm crystalline structure of the Cu2WSe4. The TEM image revealed that the crystalline nanosheet structures of the Cu2WSe4. The I-V measurements were performed under dark and light illumination in the range 20 mW-100 mW light intensities with 20 mW interval. In addition, some diode parameters such as ideality factor, barrier height and series resistance were extracted via a various method and discussed in the details. The C-V measurements were employed for various frequency and voltages. The C-V characteristics of the device confirmed the strong dependence on the frequency and voltage. The results imparted that Au/Cu2WSe4/p-Si can be employed for photodiode, photodetector and capacitor applications. (C) 2018 Elsevier B.V. All rights reserved.