The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

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dc.contributor.authorKocyigit, Adem.
dc.contributor.authorYıldırım, Murat.
dc.contributor.authorSarılmaz, Adem.
dc.contributor.authorOzel, Faruk.
dc.date.accessioned2020-03-26T20:19:21Z
dc.date.available2020-03-26T20:19:21Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Biyoteknoloji Bölümüen_US
dc.description.abstractCu2WSe4 nanosheets were synthesized by the hot-injection method and put as interfacial layers between Au metal and p-Si by spin coating technique to investigate their photoresponse and capacitor properties via I-V and C-V measurements, respectively. The XRD were operated to confirm crystalline structure of the Cu2WSe4. The TEM image revealed that the crystalline nanosheet structures of the Cu2WSe4. The I-V measurements were performed under dark and light illumination in the range 20 mW-100 mW light intensities with 20 mW interval. In addition, some diode parameters such as ideality factor, barrier height and series resistance were extracted via a various method and discussed in the details. The C-V measurements were employed for various frequency and voltages. The C-V characteristics of the device confirmed the strong dependence on the frequency and voltage. The results imparted that Au/Cu2WSe4/p-Si can be employed for photodiode, photodetector and capacitor applications. (C) 2018 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [17401159]; Karamanoglu Mehmetbey UniversityKaramanoglu Mehmetbey University [32-M-16]en_US
dc.description.sponsorshipThe authors would like to thank to Selcuk University BAP office (Project Number 17401159) and Karamanoglu Mehmetbey University (Grand Number: 32-M-16) for Scientific Research Foundation.en_US
dc.identifier.citationKocyigit, A., Yıldırım, M., Sarılmaz, A., Ozel, F. (2019). The Au/Cu2WSe4/p-Si Photodiode: Electrical and Morphological Characterization. Journal of Alloys and Compounds, 780, 186-192.
dc.identifier.doi10.1016/j.jallcom.2018.11.372en_US
dc.identifier.endpage192en_US
dc.identifier.issn0925-8388en_US
dc.identifier.issn1873-4669en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage186en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2018.11.372
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38231
dc.identifier.volume780en_US
dc.identifier.wosWOS:000456789000024en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorYıldırım, Murat.
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectCu2WSe4en_US
dc.subjectCopper tungsten selenideen_US
dc.subjectSchottky devicesen_US
dc.subjectAu/Cu2WSe4/p-Si photodiodeen_US
dc.subjectPhotodetectoren_US
dc.titleThe Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterizationen_US
dc.typeArticleen_US

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