Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
Küçük Resim Yok
Tarih
2014
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
ELSEVIER SCIENCE SA
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200-700 nm. The results of the absorption coefficient (alpha) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV-vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (alpha) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E-U) was determined to be 1.169 eV. The current-voltage (I-V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I-V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions. (c) 2013 Elsevier B.V. All rights reserved.
Açıklama
Anahtar Kelimeler
Rubrene organic compound, Spin coating technique, Optical band gap, Device parameters
Kaynak
JOURNAL OF ALLOYS AND COMPOUNDS
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
582
