Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

Basit Öğe Kaydı
dc.contributor.authorTugluoglu, Nihat
dc.contributor.authorBaris, Behzad
dc.contributor.authorGurel, Hatice
dc.contributor.authorKaradeniz, Serdar
dc.contributor.authorYuksel, Omer Faruk
dc.date.accessioned2020-03-26T18:51:15Z
dc.date.available2020-03-26T18:51:15Z
dc.date.issued2014
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractRubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200-700 nm. The results of the absorption coefficient (alpha) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV-vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (alpha) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E-U) was determined to be 1.169 eV. The current-voltage (I-V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I-V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions. (c) 2013 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipGiresun University BAP officeGiresun University [FEN-BAP-A-160512-26]en_US
dc.description.sponsorshipThis work is partly supported by Giresun University BAP office with the research Project Number FEN-BAP-A-160512-26. Some of the authors (B. Baris and H. Gurel) is grateful for financial assistance provided by Giresun University BAP office.en_US
dc.identifier.doi10.1016/j.jallcom.2013.08.067en_US
dc.identifier.endpage702en_US
dc.identifier.issn0925-8388en_US
dc.identifier.issn1873-4669en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage696en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.jallcom.2013.08.067
dc.identifier.urihttps://hdl.handle.net/20.500.12395/30947
dc.identifier.volume582en_US
dc.identifier.wosWOS:000325468100113en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectRubrene organic compounden_US
dc.subjectSpin coating techniqueen_US
dc.subjectOptical band gapen_US
dc.subjectDevice parametersen_US
dc.titleInvestigation of optical band gap and device parameters of rubrene thin film prepared using spin coating techniqueen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu